BSO220N03MDGXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSO220N03MDGXUMA1 is a BSO220N03MDGXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 6A 1.4W 22mΩ@7.7A,10V 2.1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 1.4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@7.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 800pF@15V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.105 grams.

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Full Specifications of BSO220N03MDGXUMA1

Model NumberBSO220N03MDGXUMA1
Model NameInfineon Technologies BSO220N03MDGXUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 6A 1.4W 22mΩ@7.7A,10V 2.1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.105 grams / 0.003704 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)1.4W
Drain Source On Resistance (RDS(on)@Vgs,Id)22mΩ@7.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.1V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)800pF@15V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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