BSO303P by Infineon Technologies – Specifications

Infineon Technologies BSO303P is a BSO303P from Infineon Technologies, part of the MOSFETs. It is designed for 30V 8.2A 2W 21mΩ@8.2A,10V 2V@100uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8.2A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@8.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@100uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 1.761nF@25V
  • Total Gate Charge (Qg@Vgs): 72.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSO303P

Full Specifications of BSO303P

Model NumberBSO303P
Model NameInfineon Technologies BSO303P
CategoryMOSFETs
BrandInfineon Technologies
Description30V 8.2A 2W 21mΩ@8.2A,10V 2V@100uA 2 P-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8.2A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)21mΩ@8.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@100uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)1.761nF@25V
Total Gate Charge (Qg@Vgs)72.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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