BSO612CV G by Infineon Technologies – Specifications

Infineon Technologies BSO612CV G is a BSO612CV G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 2W 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 3A;2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@3A,10V;300mΩ@2A,10V
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@20uA;4V@450uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 340pF;400pF@25V
  • Total Gate Charge (Qg@Vgs): 15.5nC@10V;16nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSO612CV G

Full Specifications of BSO612CV G

Model NumberBSO612CV G
Model NameInfineon Technologies BSO612CV G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 2W 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)3A;2A
Drain Source On Resistance (RDS(on)@Vgs,Id)120mΩ@3A,10V;300mΩ@2A,10V
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)4V@20uA;4V@450uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)340pF;400pF@25V
Total Gate Charge (Qg@Vgs)15.5nC@10V;16nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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