BSO613SPV G by Infineon Technologies – Specifications

Infineon Technologies BSO613SPV G is a BSO613SPV G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 3.44A 110mΩ@10V,3.44A 2.5W 3V@1mA 1PCSPChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 3.44A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,3.44A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): 95pF@25V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 700pF@25V
  • Total Gate Charge (Qg@Vgs): 20nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BSO613SPV G

Model NumberBSO613SPV G
Model NameInfineon Technologies BSO613SPV G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 3.44A 110mΩ@10V,3.44A 2.5W 3V@1mA 1PCSPChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)3.44A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@10V,3.44A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Reverse Transfer Capacitance (Crss@Vds)95pF@25V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)700pF@25V
Total Gate Charge (Qg@Vgs)20nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - BSO613SPV G With Other 200 Models

Related Models - BSO613SPV G Alternative

Scroll to Top