BSO615N G by Infineon Technologies – Specifications

Infineon Technologies BSO615N G is a BSO615N G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 2.6A 150mΩ@4.5V,2.6A 2W 2V@20uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@4.5V,2.6A
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@20uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.808 grams.

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Full Specifications of BSO615N G

Model NumberBSO615N G
Model NameInfineon Technologies BSO615N G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 2.6A 150mΩ@4.5V,2.6A 2W 2V@20uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.808 grams / 0.028501 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)2.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@4.5V,2.6A
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)2V@20uA
Type2 N-Channel

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