BSO615NGXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSO615NGXUMA1 is a BSO615NGXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 2.6A 2W 150mΩ@2.6A,4.5V 2V@20uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 2.6A
• Power Dissipation (Pd): 2W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@2.6A,4.5V
• Gate Threshold Voltage (Vgs(th)@Id): 2V@20uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 380pF@25V
• Total Gate Charge (Qg@Vgs): 20nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.