BSP149H6327 by Infineon Technologies – Specifications

Infineon Technologies BSP149H6327 is a BSP149H6327 from Infineon Technologies, part of the MOSFETs. It is designed for 200V 660mA 1.8W 1.8Ω@10V,660mA 1V@400uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 660mA
  • Power Dissipation (Pd): 1.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8Ω@10V,660mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@400uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.

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Full Specifications of BSP149H6327

Model NumberBSP149H6327
Model NameInfineon Technologies BSP149H6327
CategoryMOSFETs
BrandInfineon Technologies
Description200V 660mA 1.8W 1.8Ω@10V,660mA 1V@400uA 1PCSNChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.160 grams / 0.005644 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)660mA
Power Dissipation (Pd)1.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8Ω@10V,660mA
Gate Threshold Voltage (Vgs(th)@Id)1V@400uA
Type1PCSNChannel

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