BSP603S2LNT by Infineon Technologies – Specifications

Infineon Technologies BSP603S2LNT is a BSP603S2LNT from Infineon Technologies, part of the MOSFETs. It is designed for 55V 5.2A 33mΩ@2.6A,10V 1.8W 2V@50uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 55V
• Continuous Drain Current (Id): 5.2A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@2.6A,10V
• Power Dissipation (Pd): 1.8W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@50uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.39nF@25V
• Total Gate Charge (Qg@Vgs): 42nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.