Infineon Technologies BSP88L6327 is a BSP88L6327 from Infineon Technologies, part of the MOSFETs. It is designed for 240V 350mA 6Ω@350mA,10V 1.8W 1.4V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 240V
- Continuous Drain Current (Id): 350mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6Ω@350mA,10V
- Power Dissipation (Pd): 1.8W
- Gate Threshold Voltage (Vgs(th)@Id): 1.4V@108uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 95pF@25V
- Total Gate Charge (Qg@Vgs): 6.8nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSP88L6327
Full Specifications of BSP88L6327
Model Number | BSP88L6327 |
Model Name | Infineon Technologies BSP88L6327 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 240V 350mA 6Ω@350mA,10V 1.8W 1.4V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SOT-223-4 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 240V |
Continuous Drain Current (Id) | 350mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6Ω@350mA,10V |
Power Dissipation (Pd) | 1.8W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.4V@108uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 95pF@25V |
Total Gate Charge (Qg@Vgs) | 6.8nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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