BSP89H6327XTSA1 by Infineon Technologies – Specifications

Infineon Technologies BSP89H6327XTSA1 is a BSP89H6327XTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 240V 350mA 1.8W 6Ω@350mA,10V 1.8V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 240V
  • Continuous Drain Current (Id): 350mA
  • Power Dissipation (Pd): 1.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6Ω@350mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@108uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 140pF@25V
  • Total Gate Charge (Qg@Vgs): 6.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSP89H6327XTSA1

Full Specifications of BSP89H6327XTSA1

Model NumberBSP89H6327XTSA1
Model NameInfineon Technologies BSP89H6327XTSA1
CategoryMOSFETs
BrandInfineon Technologies
Description240V 350mA 1.8W 6Ω@350mA,10V 1.8V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)240V
Continuous Drain Current (Id)350mA
Power Dissipation (Pd)1.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)6Ω@350mA,10V
Gate Threshold Voltage (Vgs(th)@Id)1.8V@108uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)140pF@25V
Total Gate Charge (Qg@Vgs)6.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - BSP89H6327XTSA1 With Other 200 Models

Related Models - BSP89H6327XTSA1 Alternative

Scroll to Top