Infineon Technologies BSS126IXTSA1 is a BSS126IXTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 21mA 500mW 500Ω@16mA,10V 1.6V@8uA 1PCSNChannel SOT-23-3-5 MOSFETs ROHS. This product comes in a SOT-23-3-5 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 21mA
- Power Dissipation (Pd): 500mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 500Ω@16mA,10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@8uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 21pF@25V
- Total Gate Charge (Qg@Vgs): 1.4nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.
More on BSS126IXTSA1
Full Specifications of BSS126IXTSA1
Model Number | BSS126IXTSA1 |
Model Name | Infineon Technologies BSS126IXTSA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 600V 21mA 500mW 500Ω@16mA,10V 1.6V@8uA 1PCSNChannel SOT-23-3-5 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.400 grams / 0.01411 oz |
Package / Case | SOT-23-3-5 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 21mA |
Power Dissipation (Pd) | 500mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 500Ω@16mA,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@8uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 21pF@25V |
Total Gate Charge (Qg@Vgs) | 1.4nC@5V |
Operating Temperature | -55℃~+150℃@(Tj) |
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