BSS139IXTSA1 by Infineon Technologies – Specifications

Infineon Technologies BSS139IXTSA1 is a BSS139IXTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 250V 100A 360mW 14Ω@100mA,10V 1V@56uA N Channel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 360mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14Ω@100mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@56uA
  • Type: N Channel
  • Input Capacitance (Ciss@Vds): 60pF@25V
  • Total Gate Charge (Qg@Vgs): 2.3nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSS139IXTSA1

Model NumberBSS139IXTSA1
Model NameInfineon Technologies BSS139IXTSA1
CategoryMOSFETs
BrandInfineon Technologies
Description250V 100A 360mW 14Ω@100mA,10V 1V@56uA N Channel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)360mW
Drain Source On Resistance (RDS(on)@Vgs,Id)14Ω@100mA,10V
Gate Threshold Voltage (Vgs(th)@Id)1V@56uA
TypeN Channel
Input Capacitance (Ciss@Vds)60pF@25V
Total Gate Charge (Qg@Vgs)2.3nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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