Infineon Technologies BSS159NH6327XTSA2 is a BSS159NH6327XTSA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 230mA 3.5Ω@10V,160mA 360mW 2.4V@26uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 230mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5Ω@10V,160mA
- Power Dissipation (Pd): 360mW
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@26uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 39pF@25V
- Total Gate Charge (Qg@Vgs): 1.4nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.004 grams.
More on BSS159NH6327XTSA2
Full Specifications of BSS159NH6327XTSA2
Model Number | BSS159NH6327XTSA2 |
Model Name | Infineon Technologies BSS159NH6327XTSA2 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 230mA 3.5Ω@10V,160mA 360mW 2.4V@26uA 1PCSNChannel SOT-23 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.004 grams / 0.000141 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 230mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5Ω@10V,160mA |
Power Dissipation (Pd) | 360mW |
Gate Threshold Voltage (Vgs(th)@Id) | 2.4V@26uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 39pF@25V |
Total Gate Charge (Qg@Vgs) | 1.4nC@5V |
Operating Temperature | -55℃~+150℃@(Tj) |
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