Infineon Technologies BSS83P H6327 is a BSS83P H6327 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS. This product comes in a PG-SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 330mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,330mA
- Power Dissipation (Pd): 360mW
- Gate Threshold Voltage (Vgs(th)@Id): 2V@80uA
- Type: P Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSS83P H6327
Full Specifications of BSS83P H6327
Model Number | BSS83P H6327 |
Model Name | Infineon Technologies BSS83P H6327 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PG-SOT-23-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 330mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2Ω@10V,330mA |
Power Dissipation (Pd) | 360mW |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@80uA |
Type | P Channel |
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