BSS83P H6327 by Infineon Technologies – Specifications

Infineon Technologies BSS83P H6327 is a BSS83P H6327 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS. This product comes in a PG-SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 330mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,330mA
  • Power Dissipation (Pd): 360mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@80uA
  • Type: P Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BSS83P H6327

Model NumberBSS83P H6327
Model NameInfineon Technologies BSS83P H6327
CategoryMOSFETs
BrandInfineon Technologies
Description60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePG-SOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)330mA
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@10V,330mA
Power Dissipation (Pd)360mW
Gate Threshold Voltage (Vgs(th)@Id)2V@80uA
TypeP Channel

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