BSZ0503NSIATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSZ0503NSIATMA1 is a BSZ0503NSIATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 3.4mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 20A;40A
  • Power Dissipation (Pd): 2.1W;36W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.3nF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.

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Full Specifications of BSZ0503NSIATMA1

Model NumberBSZ0503NSIATMA1
Model NameInfineon Technologies BSZ0503NSIATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 3.4mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.450 grams / 0.015873 oz
Package / CaseTSDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)20A;40A
Power Dissipation (Pd)2.1W;36W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.3nF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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