BSZ0901NS by Infineon Technologies – Specifications

Infineon Technologies BSZ0901NS is a BSZ0901NS from Infineon Technologies, part of the MOSFETs. It is designed for 30V 145A 1.7mΩ@10V,20A 69W 2V@250uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS. This product comes in a TSDSON-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 145A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.7mΩ@10V,20A
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 150pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.85nF@15V
  • Total Gate Charge (Qg@Vgs): 23nC@0~4.5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.09 grams.

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Full Specifications of BSZ0901NS

Model NumberBSZ0901NS
Model NameInfineon Technologies BSZ0901NS
CategoryMOSFETs
BrandInfineon Technologies
Description30V 145A 1.7mΩ@10V,20A 69W 2V@250uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.090 grams / 0.003175 oz
Package / CaseTSDSON-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)145A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.7mΩ@10V,20A
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)150pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.85nF@15V
Total Gate Charge (Qg@Vgs)23nC@0~4.5V
Operating Temperature-55℃~+150℃@(Tj)

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