BSZ0909NSATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSZ0909NSATMA1 is a BSZ0909NSATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 34V 12mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 34V
  • Continuous Drain Current (Id): 9A;36A
  • Power Dissipation (Pd): 2.1W;25W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.31nF@15V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.

More on BSZ0909NSATMA1

Full Specifications of BSZ0909NSATMA1

Model NumberBSZ0909NSATMA1
Model NameInfineon Technologies BSZ0909NSATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description34V 12mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.450 grams / 0.015873 oz
Package / CaseTSDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)34V
Continuous Drain Current (Id)9A;36A
Power Dissipation (Pd)2.1W;25W
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.31nF@15V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - BSZ0909NSATMA1 With Other 200 Models

Related Models - BSZ0909NSATMA1 Alternative

Scroll to Top