Infineon Technologies BSZ0910ND is a BSZ0910ND from Infineon Technologies, part of the MOSFETs. It is designed for 30V 25A 7.7mΩ@10V,9A 31W 1.6V@250uA 2 N-Channel ISON-8-EP(3x3) MOSFETs ROHS. This product comes in a ISON-8-EP(3x3) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Configuration: Half Bridge
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.7mΩ@10V,9A
- Power Dissipation (Pd): 31W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 21pF@15V
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 590pF@15V
- Total Gate Charge (Qg@Vgs): 8.2nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSZ0910ND
Full Specifications of BSZ0910ND
Model Number | BSZ0910ND |
Model Name | Infineon Technologies BSZ0910ND |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 25A 7.7mΩ@10V,9A 31W 1.6V@250uA 2 N-Channel ISON-8-EP(3x3) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | ISON-8-EP(3x3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 30V |
Configuration | Half Bridge |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.7mΩ@10V,9A |
Power Dissipation (Pd) | 31W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 21pF@15V |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 590pF@15V |
Total Gate Charge (Qg@Vgs) | 8.2nC@0~10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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