BSZ123N08NS3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSZ123N08NS3GATMA1 is a BSZ123N08NS3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 10A 2.1W 12.3mΩ@10V,20A 3.5V@33uA 1PCSNChannel TSDSON-8-EP(3.3x3.3) MOSFETs ROHS. This product comes in a TSDSON-8-EP(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 2.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.3mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@33uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.1 grams.

More on BSZ123N08NS3GATMA1

Full Specifications of BSZ123N08NS3GATMA1

Model NumberBSZ123N08NS3GATMA1
Model NameInfineon Technologies BSZ123N08NS3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 10A 2.1W 12.3mΩ@10V,20A 3.5V@33uA 1PCSNChannel TSDSON-8-EP(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.100 grams / 0.003527 oz
Package / CaseTSDSON-8-EP(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)2.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)12.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@33uA
Type1PCSNChannel

Compare Infineon Technologies - BSZ123N08NS3GATMA1 With Other 200 Models

Related Models - BSZ123N08NS3GATMA1 Alternative

Scroll to Top