BSZ12DN20NS3 G by Infineon Technologies – Specifications

Infineon Technologies BSZ12DN20NS3 G is a BSZ12DN20NS3 G from Infineon Technologies, part of the MOSFETs. It is designed for 200V 11.3A 125mΩ@10V,5.7A 50W 4V@25uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS. This product comes in a TSDSON-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 11.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@10V,5.7A
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@25uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSZ12DN20NS3 G

Model NumberBSZ12DN20NS3 G
Model NameInfineon Technologies BSZ12DN20NS3 G
CategoryMOSFETs
BrandInfineon Technologies
Description200V 11.3A 125mΩ@10V,5.7A 50W 4V@25uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSDSON-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)11.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@10V,5.7A
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)4V@25uA
Type1PCSNChannel

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