Infineon Technologies BSZ16DN25NS3 G is a BSZ16DN25NS3 G from Infineon Technologies, part of the MOSFETs. It is designed for TSDSON-8(3.3x3.3) MOSFETs ROHS. This product comes in a TSDSON-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.07 grams.
More on BSZ16DN25NS3 G
Full Specifications of BSZ16DN25NS3 G
Model Number | BSZ16DN25NS3 G |
Model Name | Infineon Technologies BSZ16DN25NS3 G |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | TSDSON-8(3.3x3.3) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.070 grams / 0.002469 oz |
Package / Case | TSDSON-8(3.3x3.3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | - |
Continuous Drain Current (Id) | - |
Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | - |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
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