BSZ180P03NS3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSZ180P03NS3GATMA1 is a BSZ180P03NS3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9A;39.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@20A,10V
  • Power Dissipation (Pd): 2.1W;40W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.1V@48uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.22nF@15V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSZ180P03NS3GATMA1

Model NumberBSZ180P03NS3GATMA1
Model NameInfineon Technologies BSZ180P03NS3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)9A;39.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@20A,10V
Power Dissipation (Pd)2.1W;40W
Gate Threshold Voltage (Vgs(th)@Id)3.1V@48uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.22nF@15V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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