Infineon Technologies BSZ215CHXTMA1 is a BSZ215CHXTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 20V 2.5W 55mΩ@5.1A,4.5V 1.4V@110uA 1PCSNChannel+1PCSPChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 5.1A;3.2A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@5.1A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.4V@110uA
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 419pF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSZ215CHXTMA1
Full Specifications of BSZ215CHXTMA1
Model Number | BSZ215CHXTMA1 |
Model Name | Infineon Technologies BSZ215CHXTMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 20V 2.5W 55mΩ@5.1A,4.5V 1.4V@110uA 1PCSNChannel+1PCSPChannel TSDSON-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TSDSON-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 5.1A;3.2A |
Power Dissipation (Pd) | 2.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@5.1A,4.5V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.4V@110uA |
Type | 1PCSNChannel+1PCSPChannel |
Input Capacitance (Ciss@Vds) | 419pF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+175℃@(Tj) |
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