BSZ520N15NS3 G by Infineon Technologies – Specifications

Infineon Technologies BSZ520N15NS3 G is a BSZ520N15NS3 G from Infineon Technologies, part of the MOSFETs. It is designed for 150V 21A 52mΩ@10V,18A 57W 4V@35uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS. This product comes in a TSDSON-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,18A
  • Power Dissipation (Pd): 57W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@35uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.122 grams.

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Full Specifications of BSZ520N15NS3 G

Model NumberBSZ520N15NS3 G
Model NameInfineon Technologies BSZ520N15NS3 G
CategoryMOSFETs
BrandInfineon Technologies
Description150V 21A 52mΩ@10V,18A 57W 4V@35uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.122 grams / 0.004303 oz
Package / CaseTSDSON-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)21A
Drain Source On Resistance (RDS(on)@Vgs,Id)52mΩ@10V,18A
Power Dissipation (Pd)57W
Gate Threshold Voltage (Vgs(th)@Id)4V@35uA
Type1PCSNChannel

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