Infineon Technologies BTS115AE6327 is a BTS115AE6327 from Infineon Technologies, part of the MOSFETs. It is designed for 50V 15.5A 120mΩ@7.8A,4.5V 50W 2.5V@1mA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 50V
- Continuous Drain Current (Id): 15.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@7.8A,4.5V
- Power Dissipation (Pd): 50W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@1mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 735pF@25V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BTS115AE6327
Full Specifications of BTS115AE6327
Model Number | BTS115AE6327 |
Model Name | Infineon Technologies BTS115AE6327 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 50V 15.5A 120mΩ@7.8A,4.5V 50W 2.5V@1mA 1PCSNChannel TO-220-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220-3 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 50V |
Continuous Drain Current (Id) | 15.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 120mΩ@7.8A,4.5V |
Power Dissipation (Pd) | 50W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1mA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 735pF@25V |
Operating Temperature | -55℃~+150℃@(Tj) |
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