BTS244ZE3062ANTMA1 by Infineon Technologies – Specifications

Infineon Technologies BTS244ZE3062ANTMA1 is a BTS244ZE3062ANTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 35A 170W 13mΩ@19A,10V 2V@130uA 1PCSNChannel TO-263-5-2 MOSFETs ROHS. This product comes in a TO-263-5-2 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 35A
  • Power Dissipation (Pd): 170W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@19A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@130uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.66nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -40℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BTS244ZE3062ANTMA1

Model NumberBTS244ZE3062ANTMA1
Model NameInfineon Technologies BTS244ZE3062ANTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description55V 35A 170W 13mΩ@19A,10V 2V@130uA 1PCSNChannel TO-263-5-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-5-2
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)35A
Power Dissipation (Pd)170W
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@19A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@130uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.66nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-40℃~+175℃@(Tj)

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