DD1200S17H4_B2 by Infineon Technologies – Specifications

Infineon Technologies DD1200S17H4_B2 is a DD1200S17H4_B2 from Infineon Technologies, part of the IGBTs. It is designed for 1200kW 1.2kA 1.7kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

• Power Dissipation (Pd): 1200kW
• Operating Temperature: -40℃~+150℃@(Tj)
• Collector Current (Ic): 1.2kA
• Collector-Emitter Breakdown Voltage (Vces): 1.7kV
• Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@0V,1.2kA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.