DD800S17H4_B2 by Infineon Technologies – Specifications

Infineon Technologies DD800S17H4_B2 is a DD800S17H4_B2 from Infineon Technologies, part of the IGBTs. It is designed for 800A 1.7kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 800A
  • Collector-Emitter Breakdown Voltage (Vces): 1.7kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@0V,800A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of DD800S17H4_B2

Model NumberDD800S17H4_B2
Model NameInfineon Technologies DD800S17H4_B2
CategoryIGBTs
BrandInfineon Technologies
Description800A 1.7kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@0V,800A

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