Infineon Technologies DD800S17H4_B2 is a DD800S17H4_B2 from Infineon Technologies, part of the IGBTs. It is designed for 800A 1.7kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:
- Operating Temperature: -40℃~+150℃@(Tj)
- Collector Current (Ic): 800A
- Collector-Emitter Breakdown Voltage (Vces): 1.7kV
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@0V,800A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on DD800S17H4_B2
Full Specifications of DD800S17H4_B2
Model Number | DD800S17H4_B2 |
Model Name | Infineon Technologies DD800S17H4_B2 |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 800A 1.7kV - IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | - |
Package / Arrange | Tray |
Battery | No |
ECCN | EAR99 |
Operating Temperature | -40℃~+150℃@(Tj) |
Collector Current (Ic) | 800A |
Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@0V,800A |
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