DF100R07W1H5FPB53BPSA1 by Infineon Technologies – Specifications

Infineon Technologies DF100R07W1H5FPB53BPSA1 is a DF100R07W1H5FPB53BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 20mW 40A 650V - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 20mW
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 2.8nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.55V@15V,25A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on DF100R07W1H5FPB53BPSA1

Full Specifications of DF100R07W1H5FPB53BPSA1

Model NumberDF100R07W1H5FPB53BPSA1
Model NameInfineon Technologies DF100R07W1H5FPB53BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description20mW 40A 650V - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)20mW
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)2.8nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.55V@15V,25A

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