DF200R12PT4B6BOSA1 by Infineon Technologies – Specifications

Infineon Technologies DF200R12PT4B6BOSA1 is a DF200R12PT4B6BOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 1.1kW 300A 1.2kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 1.1kW
  • Operating Temperature: -40℃~+150℃
  • Collector Current (Ic): 300A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 12.5nF@25V
  • Type: FS(Field Stop)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on DF200R12PT4B6BOSA1

Full Specifications of DF200R12PT4B6BOSA1

Model NumberDF200R12PT4B6BOSA1
Model NameInfineon Technologies DF200R12PT4B6BOSA1
CategoryIGBTs
BrandInfineon Technologies
Description1.1kW 300A 1.2kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)1.1kW
Operating Temperature-40℃~+150℃
Collector Current (Ic)300A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)12.5nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-

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