DF80R07W1H5FPB11BPSA1 by Infineon Technologies – Specifications

Infineon Technologies DF80R07W1H5FPB11BPSA1 is a DF80R07W1H5FPB11BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 200mW 40A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 200mW
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 2nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.72V@15V,20A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on DF80R07W1H5FPB11BPSA1

Full Specifications of DF80R07W1H5FPB11BPSA1

Model NumberDF80R07W1H5FPB11BPSA1
Model NameInfineon Technologies DF80R07W1H5FPB11BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description200mW 40A 650V FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)200mW
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)2nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.72V@15V,20A

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