DF80R12W2H3B11BOMA1 by Infineon Technologies – Specifications

Infineon Technologies DF80R12W2H3B11BOMA1 is a DF80R12W2H3B11BOMA1 from Infineon Technologies, part of the IGBTs. It is designed for 190W 50A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 190W
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 50A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 2.35nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.7V@15V,20A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on DF80R12W2H3B11BOMA1

Full Specifications of DF80R12W2H3B11BOMA1

Model NumberDF80R12W2H3B11BOMA1
Model NameInfineon Technologies DF80R12W2H3B11BOMA1
CategoryIGBTs
BrandInfineon Technologies
Description190W 50A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)190W
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)2.35nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.7V@15V,20A

Compare Infineon Technologies - DF80R12W2H3B11BOMA1 With Other 200 Models

Related Models - DF80R12W2H3B11BOMA1 Alternative

Scroll to Top