F3L100R07W2E3B11BOMA1 by Infineon Technologies – Specifications

Infineon Technologies F3L100R07W2E3B11BOMA1 is a F3L100R07W2E3B11BOMA1 from Infineon Technologies, part of the IGBTs. It is designed for 300W 117A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 300W
  • Operating Temperature: -40℃~+150℃
  • Collector Current (Ic): 117A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 6.2nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.9V@15V,100A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on F3L100R07W2E3B11BOMA1

Full Specifications of F3L100R07W2E3B11BOMA1

Model NumberF3L100R07W2E3B11BOMA1
Model NameInfineon Technologies F3L100R07W2E3B11BOMA1
CategoryIGBTs
BrandInfineon Technologies
Description300W 117A 650V FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)300W
Operating Temperature-40℃~+150℃
Collector Current (Ic)117A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)6.2nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,100A

Compare Infineon Technologies - F3L100R07W2E3B11BOMA1 With Other 200 Models

Related Models - F3L100R07W2E3B11BOMA1 Alternative

Scroll to Top