F3L11MR12W2M1B65BOMA1 by Infineon Technologies – Specifications

Infineon Technologies F3L11MR12W2M1B65BOMA1 is a F3L11MR12W2M1B65BOMA1 from Infineon Technologies, part of the IGBTs. It is designed for 200mW 100A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 200mW
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 7.36nF@800V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,100A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on F3L11MR12W2M1B65BOMA1

Full Specifications of F3L11MR12W2M1B65BOMA1

Model NumberF3L11MR12W2M1B65BOMA1
Model NameInfineon Technologies F3L11MR12W2M1B65BOMA1
CategoryIGBTs
BrandInfineon Technologies
Description200mW 100A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)200mW
Operating Temperature-
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)7.36nF@800V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,100A

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