F3L200R12N2H3B47BPSA2 by Infineon Technologies – Specifications

Infineon Technologies F3L200R12N2H3B47BPSA2 is a F3L200R12N2H3B47BPSA2 from Infineon Technologies, part of the IGBTs. It is designed for 20mW 150A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 20mW
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 150A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 11.5nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.15V@15V,150A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on F3L200R12N2H3B47BPSA2

Full Specifications of F3L200R12N2H3B47BPSA2

Model NumberF3L200R12N2H3B47BPSA2
Model NameInfineon Technologies F3L200R12N2H3B47BPSA2
CategoryIGBTs
BrandInfineon Technologies
Description20mW 150A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)20mW
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)11.5nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,150A

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