F3L200R12W2H3B11BPSA1 by Infineon Technologies – Specifications

Infineon Technologies F3L200R12W2H3B11BPSA1 is a F3L200R12W2H3B11BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 600W 100A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 600W
  • Operating Temperature: -40℃~+150℃
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 11.5nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.75V@15V,100A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on F3L200R12W2H3B11BPSA1

Full Specifications of F3L200R12W2H3B11BPSA1

Model NumberF3L200R12W2H3B11BPSA1
Model NameInfineon Technologies F3L200R12W2H3B11BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description600W 100A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)600W
Operating Temperature-40℃~+150℃
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)11.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.75V@15V,100A

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