F411MR12W2M1B76BOMA1 by Infineon Technologies – Specifications

Infineon Technologies F411MR12W2M1B76BOMA1 is a F411MR12W2M1B76BOMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 1.2kV 100A 11.3mΩ@100A,15V 5.55V@40mA 4PCSN-Channel AG-EASY1B-2 MOSFETs ROHS. This product comes in a AG-EASY1B-2 package and is sold as Tray. Key features include:

• Drain Source Voltage (Vdss): 1.2kV
• Configuration: Half Bridge
• Continuous Drain Current (Id): 100A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 11.3mΩ@100A,15V
• Gate Threshold Voltage (Vgs(th)@Id): 5.55V@40mA
• Type: 4PCSN-Channel
• Input Capacitance (Ciss@Vds): 7.36nF@800V
• Total Gate Charge (Qg@Vgs): 248nC@15V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.