F475R12KS4B11BPSA1 by Infineon Technologies – Specifications

Infineon Technologies F475R12KS4B11BPSA1 is a F475R12KS4B11BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 500W 100A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 500W
  • Operating Temperature: -40℃~+125℃@(Tj)
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 5.1nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.75V@15V,75A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on F475R12KS4B11BPSA1

Full Specifications of F475R12KS4B11BPSA1

Model NumberF475R12KS4B11BPSA1
Model NameInfineon Technologies F475R12KS4B11BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description500W 100A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)500W
Operating Temperature-40℃~+125℃@(Tj)
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)5.1nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.75V@15V,75A

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