FD1000R33HL3KBPSA1 by Infineon Technologies – Specifications

Infineon Technologies FD1000R33HL3KBPSA1 is a FD1000R33HL3KBPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 11.5kW 1kA 3.3kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 11.5kW
  • Operating Temperature: -40℃~+150℃
  • Collector Current (Ic): 1kA
  • Collector-Emitter Breakdown Voltage (Vces): 3.3kV
  • Input Capacitance (Cies@Vce): 190nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.85V@15V,1000A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FD1000R33HL3KBPSA1

Full Specifications of FD1000R33HL3KBPSA1

Model NumberFD1000R33HL3KBPSA1
Model NameInfineon Technologies FD1000R33HL3KBPSA1
CategoryIGBTs
BrandInfineon Technologies
Description11.5kW 1kA 3.3kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)11.5kW
Operating Temperature-40℃~+150℃
Collector Current (Ic)1kA
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance (Cies@Vce)190nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.85V@15V,1000A

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