FD400R33KF2CKNOSA1 by Infineon Technologies – Specifications

Infineon Technologies FD400R33KF2CKNOSA1 is a FD400R33KF2CKNOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 4.8kW 660A 3.3kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 4.8kW
  • Collector Current (Ic): 660A
  • Collector-Emitter Breakdown Voltage (Vces): 3.3kV
  • Input Capacitance (Cies@Vce): 50nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4.25V@15V,400A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FD400R33KF2CKNOSA1

Full Specifications of FD400R33KF2CKNOSA1

Model NumberFD400R33KF2CKNOSA1
Model NameInfineon Technologies FD400R33KF2CKNOSA1
CategoryIGBTs
BrandInfineon Technologies
Description4.8kW 660A 3.3kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)4.8kW
Operating Temperature-
Collector Current (Ic)660A
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance (Cies@Vce)50nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.25V@15V,400A

Compare Infineon Technologies - FD400R33KF2CKNOSA1 With Other 200 Models

Related Models - FD400R33KF2CKNOSA1 Alternative

Scroll to Top