FD800R17HP4KB2BOSA2 by Infineon Technologies – Specifications

Infineon Technologies FD800R17HP4KB2BOSA2 is a FD800R17HP4KB2BOSA2 from Infineon Technologies, part of the IGBTs. It is designed for 5.2kW 800A 1.7kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 5.2kW
  • Operating Temperature: -40℃~+150℃
  • Collector Current (Ic): 800A
  • Collector-Emitter Breakdown Voltage (Vces): 1.7kV
  • Input Capacitance (Cies@Vce): 65nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.25V@15V,800A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FD800R17HP4KB2BOSA2

Full Specifications of FD800R17HP4KB2BOSA2

Model NumberFD800R17HP4KB2BOSA2
Model NameInfineon Technologies FD800R17HP4KB2BOSA2
CategoryIGBTs
BrandInfineon Technologies
Description5.2kW 800A 1.7kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)5.2kW
Operating Temperature-40℃~+150℃
Collector Current (Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance (Cies@Vce)65nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,800A

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