FD800R33KF2CNOSA1 by Infineon Technologies – Specifications

Infineon Technologies FD800R33KF2CNOSA1 is a FD800R33KF2CNOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 9.6kW 3.3kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 9.6kW
  • Collector-Emitter Breakdown Voltage (Vces): 3.3kV
  • Input Capacitance (Cies@Vce): 100nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4.25V@15V,800A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FD800R33KF2CNOSA1

Full Specifications of FD800R33KF2CNOSA1

Model NumberFD800R33KF2CNOSA1
Model NameInfineon Technologies FD800R33KF2CNOSA1
CategoryIGBTs
BrandInfineon Technologies
Description9.6kW 3.3kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)9.6kW
Operating Temperature-
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance (Cies@Vce)100nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.25V@15V,800A

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