FF200R33KF2CNOSA1 by Infineon Technologies – Specifications

Infineon Technologies FF200R33KF2CNOSA1 is a FF200R33KF2CNOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 2.2kW 330A 3.3kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 2.2kW
  • Collector Current (Ic): 330A
  • Collector-Emitter Breakdown Voltage (Vces): 3.3kV
  • Input Capacitance (Cies@Vce): 25nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4.25V@15V,200A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FF200R33KF2CNOSA1

Full Specifications of FF200R33KF2CNOSA1

Model NumberFF200R33KF2CNOSA1
Model NameInfineon Technologies FF200R33KF2CNOSA1
CategoryIGBTs
BrandInfineon Technologies
Description2.2kW 330A 3.3kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)2.2kW
Operating Temperature-
Collector Current (Ic)330A
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance (Cies@Vce)25nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.25V@15V,200A

Compare Infineon Technologies - FF200R33KF2CNOSA1 With Other 200 Models

Related Models - FF200R33KF2CNOSA1 Alternative

Scroll to Top