FF225R65T3E3P2BPSA1 by Infineon Technologies – Specifications

Infineon Technologies FF225R65T3E3P2BPSA1 is a FF225R65T3E3P2BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 1000kW 225A 5.9kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 1000kW
  • Collector Current (Ic): 225A
  • Collector-Emitter Breakdown Voltage (Vces): 5.9kV
  • Input Capacitance (Cies@Vce): 65.6nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.4V@15V,225A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FF225R65T3E3P2BPSA1

Full Specifications of FF225R65T3E3P2BPSA1

Model NumberFF225R65T3E3P2BPSA1
Model NameInfineon Technologies FF225R65T3E3P2BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description1000kW 225A 5.9kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)1000kW
Operating Temperature-
Collector Current (Ic)225A
Collector-Emitter Breakdown Voltage (Vces)5.9kV
Input Capacitance (Cies@Vce)65.6nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.4V@15V,225A

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