Infineon Technologies FF23MR12W1M1PB11BPSA1 is a FF23MR12W1M1PB11BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 200mW 50A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:
- Power Dissipation (Pd): 200mW
- Operating Temperature: -40℃~+150℃@(Tj)
- Collector Current (Ic): 50A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Input Capacitance (Cies@Vce): 3.68nF@800V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FF23MR12W1M1PB11BPSA1
Full Specifications of FF23MR12W1M1PB11BPSA1
Model Number | FF23MR12W1M1PB11BPSA1 |
Model Name | Infineon Technologies FF23MR12W1M1PB11BPSA1 |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 200mW 50A 1.2kV - IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | - |
Package / Arrange | Tray |
Battery | No |
ECCN | EAR99 |
Power Dissipation (Pd) | 200mW |
Operating Temperature | -40℃~+150℃@(Tj) |
Collector Current (Ic) | 50A |
Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
Input Capacitance (Cies@Vce) | 3.68nF@800V |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
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