FF450R33T3E3B5P2BPSA1 by Infineon Technologies – Specifications

Infineon Technologies FF450R33T3E3B5P2BPSA1 is a FF450R33T3E3B5P2BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 1000kW 450A 3.3kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 1000kW
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 450A
  • Collector-Emitter Breakdown Voltage (Vces): 3.3kV
  • Input Capacitance (Cies@Vce): 84nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.75V@15V,450A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FF450R33T3E3B5P2BPSA1

Full Specifications of FF450R33T3E3B5P2BPSA1

Model NumberFF450R33T3E3B5P2BPSA1
Model NameInfineon Technologies FF450R33T3E3B5P2BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description1000kW 450A 3.3kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)1000kW
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)450A
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance (Cies@Vce)84nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,450A

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