FP15R12KT3BOSA1 by Infineon Technologies – Specifications

Infineon Technologies FP15R12KT3BOSA1 is a FP15R12KT3BOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 83.5W 18A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 83.5W
  • Operating Temperature: -40℃~+125℃
  • Collector Current (Ic): 18A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 600pF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.45V@15V,10A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FP15R12KT3BOSA1

Full Specifications of FP15R12KT3BOSA1

Model NumberFP15R12KT3BOSA1
Model NameInfineon Technologies FP15R12KT3BOSA1
CategoryIGBTs
BrandInfineon Technologies
Description83.5W 18A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)83.5W
Operating Temperature-40℃~+125℃
Collector Current (Ic)18A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)600pF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.45V@15V,10A

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