FP25R12W2T4B11BOMA1 by Infineon Technologies – Specifications

Infineon Technologies FP25R12W2T4B11BOMA1 is a FP25R12W2T4B11BOMA1 from Infineon Technologies, part of the IGBTs. It is designed for 175W 39A 1.2kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 175W
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 39A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 1.45nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.25V@15V,25A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FP25R12W2T4B11BOMA1

Full Specifications of FP25R12W2T4B11BOMA1

Model NumberFP25R12W2T4B11BOMA1
Model NameInfineon Technologies FP25R12W2T4B11BOMA1
CategoryIGBTs
BrandInfineon Technologies
Description175W 39A 1.2kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)175W
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)39A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)1.45nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,25A

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