FP35R12KT4B11BOSA1 by Infineon Technologies – Specifications

Infineon Technologies FP35R12KT4B11BOSA1 is a FP35R12KT4B11BOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 210W 35A 1.2kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

• Power Dissipation (Pd): 210W
• Operating Temperature: -40℃~+150℃
• Collector Current (Ic): 35A
• Collector-Emitter Breakdown Voltage (Vces): 1.2kV
• Input Capacitance (Cies@Vce): 2nF@25V
• Type: FS(Field Stop)
• Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.15V@15V,35A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.