FP50R07N2E4_B11 by Infineon Technologies – Specifications

Infineon Technologies FP50R07N2E4_B11 is a FP50R07N2E4_B11 from Infineon Technologies, part of the IGBTs. It is designed for 20mW 70A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 20mW
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 70A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 3.1nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,50A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FP50R07N2E4_B11

Full Specifications of FP50R07N2E4_B11

Model NumberFP50R07N2E4_B11
Model NameInfineon Technologies FP50R07N2E4_B11
CategoryIGBTs
BrandInfineon Technologies
Description20mW 70A 650V FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)20mW
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)70A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)3.1nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,50A

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